Enhanced control of shuttle mass motion in MEMS devices
US10858241B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2016 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Apr 7, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C1/00714
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A MEMS device and a method of forming the same. A disclosed method includes: providing a silicon substrate layer, a buried oxide layer and a device silicon layer; using a microfabrication process to pattern a set of device features on the device silicon layer including a shuttle mass and an anchor frame; removing the silicon substrate layer and buried oxide below the shuttle mass; placing a shadow mask on a surface of the device silicon layer, wherein the shadow mask has an microscale opening to expose at least one device feature; and forming a nanoscale stopper on a sidewall of the at least one device feature by depositing a deposition material through the opening in a controlled manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.