Method and apparatus for producing a nanometer thick film of black phosphorus
US10858253B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2018 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | May 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low pressure process for producing thin film crystalline black phosphorus on a substrate and a black phosphorus thin film made by the process. The process includes flowing a phosphorus-containing gas into a deposition chamber and depositing phosphorus from the phosphorus-containing gas onto the substrate in the chamber. The substrate is selected from (i) a gold substrate, a gold-tin alloy substrate, a silver substrate and a copper substrate and (ii) a substrate comprising a thin film of metal selected from gold, tin, silver, copper and alloys of the foregoing metals. The substrate and phosphorus are heated to a temperature ranging from about 350° to less than about 500° C. to form a phosphorus intermediate composition. The substrate and intermediate composition are heated to a temperature of greater than 500° C. to less than about 1000° C. convert the metal phosphorus intermediate composition to the black phosphorus thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.