Manufacturing of high performance magnetoresistive sensors
US10859644B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 20, 2019 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Mar 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N59/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method includes depositing a hardmask layer over a magnetoresistive (MR) structural layer formed on a substrate, the hardmask layer being formed from tungsten or a tungsten-based composition. A photoresist layer is deposited over the hardmask layer and is patterned to expose a first portion of the hardmask layer. A first etch process is performed to remove the first portion of the hardmask layer and expose a second portion of the MR structural layer and a dry etch process is performed to remove the second portion of the MR structural layer and produce an MR sensor structure. Following the dry etch process, a composite structure remains that includes the MR sensor structure and a hardmask section of the hardmask layer, the hardmask section overlying the MR sensor structure. A spacer formed from a protective, dielectric material layer may additionally be formed surrounding the composite structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.