Patent · US Active

Memory cell write assist in response to voltage tracking of a replica circuit

US10861534B2 · kind B2 · utility

1Cited by

4References

20Claims

0Family size

Assignee

Arm Limited · GB

Inventors

Ankur Goel · Bengaluru, IN
Ishan Khera · Ferozepur, IN
Nimish Sharma · Jalandhar, IN
Ishita Satishchandra Desai · Amroli, IN
Vikash Kumar · Ranchi, IN
Nitesh Gautam · Noida, IN

Key dates

Filing date	Mar 28, 2019
Grant date	Dec 8, 2020
Priority date	—
Expiry date	Mar 28, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG11C7/227
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The claimed subject matter relate to circuits and/or methods, which operate to introduce a variable delay in a write-assist signal to a write driver of an array of SRAM cells. Particularly, a variable delay may be introduced by way of a voltage tracking circuit, which may generate a trigger signal in response to a voltage signal from an array of access devices that replicate access devices of the array of SRAM cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.