Method of forming a low-k layer and method of forming a semiconductor device
US10861695B2 · kind B2 · utility
0Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2018 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Dec 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a low-k layer includes forming a layer by providing a silicon source, a carbon source, an oxygen source, and a nitrogen source onto a substrate. The forming of the layer includes a plurality of main cycles, and each of the main cycles includes providing the silicon source, providing the carbon source, providing the oxygen source, and providing the nitrogen source, each of which is performed at least one time. Each of the main cycles includes sub-cycles in which the providing of the carbon source and the providing of the oxygen source are alternately performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.