Micro-LED chips, display screens and methods of manufacturing the same
US10861834B2 · kind B2 · utility
Inventors
Key dates
| Filing date | May 16, 2019 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | May 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a micro-LED display screen includes: forming an N-type GaN layer, a quantum-well light-emitting layer, and a P-type GaN layer on a sapphire substrate sequentially; etching the P-type GaN layer, the quantum-well light-emitting layer, and the N-type GaN layer from top to bottom, to form a first trench; forming an ITO layer on the surface of the P-type GaN layer, and etching the ITO layer to form a second trench; generating an N-type contact electrode in the first trench; generating a reflective electrode having a longitudinal cross-section in a shape with a wide upper side and a narrow lower side, respectively, on an upper surface of the N-type contact electrode and in the second trench; depositing an insulating layer on a surface of the micro-LED chip, and etching the insulating layer to expose the reflective electrodes; and soldering a driving circuit substrate to the reflective electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.