Thin film transistor substrate and related display device
US10861956B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2019 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Feb 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/80524
Abstract
A thin film transistor substrate may include a base substrate, a semiconductor member, a gate electrode, a first insulation layer, and a source/drain electrode. The semiconductor member may overlap the base substrate. The gate electrode may overlap the semiconductor member and may be insulated from the semiconductor member. The first insulation layer may be positioned on the gate electrode and may include a first contact hole. The source/drain electrode may include a first discharge hole, may be electrically connected to the semiconductor member, and may be at least partially positioned inside the first contact hole. The first discharge hole may partially expose the semiconductor member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.