Light emitting device and manufacturing method thereof
US10862005B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2018 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Oct 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting device includes a substrate, an adhesion layer, a micro light emitting device (μLED), a first conductive layer, and a second conductive layer. A light emitting surface of the μLED is away from the substrate. The μLED includes a first semiconductive layer, a second semiconductive layer, a tether layer, a first electrode, and a second electrode. The tether layer covers a portion of sidewalls of the first semi-conductive layer, a portion of a bottom surface of the first semi-conductive layer, sidewalls of the second semiconductive layer, and a portion of a bottom surface of the second semiconductive layer. The first electrode and the second electrode are respectively electrically connected to the first semiconductive layer and the second semiconductive layer. The first conductive layer and the second conductive layer are respectively electrically connected to the first electrode and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.