Method to effectively suppress heat dissipation in PCRAM devices
US10862031B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2019 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Mar 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
In some embodiments, the present disclosure relates to an integrated chip including a phase change material disposed over a bottom electrode and configured to change from a crystalline structure to an amorphous structure upon temperature changes. A top electrode is disposed over an upper surface of the phase change material. A via electrically contacts a top surface of the top electrode. Further, a maximum width of the upper surface of the phase change material is less than a maximum width of a bottom surface of the phase change material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.