Method for high resolution patterning of organic layers

US10862036B2 · kind B2 · utility

Assignee

• IMEC VZW · BE

Inventors

• Tung Huei Ke · Leuven, BE
• Pawel Malinowski · Overijse, BE
• Atsushi Nakamura · Zwijndrecht, BE

Key dates

• Filing date: Jun 27, 2016
• Grant date: Dec 8, 2020
• Expiry date: Jun 27, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

At least one embodiment relates to a method for photolithographic patterning of an organic layer on a substrate. The method includes providing a water-soluble shielding layer over the organic layer. In addition, the method includes providing a photoresist layer on the water-soluble shielding layer. The method also includes photolithographic patterning of the photoresist layer to form a patterned photoresist layer. Further, the method includes etching the water-soluble shielding layer and the organic layer, using the patterned photoresist layer as a mask, to form a patterned water-soluble shielding layer and a patterned organic layer. Still further, the method includes removing the patterned water-soluble shielding layer. The method includes, before providing the water-soluble shielding layer, providing a hydrophobic protection layer having a hydrophobic upper surface on the organic layer.