Electrically doped organic semiconducting material and organic light emitting device comprising it
US10862052B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2015 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Jun 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
The invention relates to electrically doped semiconducting material comprising iii) at least one electrical dopant selected from metal salts consisting of at least one metal cation and at least one anion and iv) at least one matrix compound of formula 1 wherein each of R1, R2, R1, R2′ is independently selected from H, C1-C6 alkyl, C1-C6 haloalkyl and C6-C14 aryl or both substituents on the same aromatic ring of the xanthene skeleton are hydrocarbyl groups linked with each other to form together an anelated divalent C2-C10 hydrocarbyl group and A and A′ are independently selected from C1-C20 heteroaryl group comprising at least one sp2 hybridized nitrogen atom as well as an electronic device and a compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.