Film bulk acoustic resonators in thin LN-LT layers
US10862454B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2020 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Jul 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/568
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Acoustic resonator devices, filter devices, and methods of fabrication are disclosed. A resonator device includes a substrate having a surface and a single-crystal piezoelectric plate including one of rotated Y-cut lithium niobate and rotated Y-cut lithium tantalate. The single-crystal piezoelectric plate has a front surface and a back surface opposite the front surface, wherein the back surface is coupled to the surface. A floating back-side conductor pattern is formed on a portion of the back surface. A front-side conductor pattern consisting of two electrodes is formed on a portion of the front surface opposite the back-side conductor, wherein a radio frequency applied between the two electrodes excites a primary acoustic mode in the single-crystal piezoelectric plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.