Patent · US Active

Plasma etching method

US10865343B2 · kind B2 · utility

1Cited by
2References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 12, 2019
Grant dateDec 15, 2020
Priority date—
Expiry dateAug 12, 2039

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Provided is a plasma etching method comprising supplying heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas and oxygen (O2) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.