Enhanced electron amplifier structure and method of fabricating the enhanced electron amplifier structure
US10867768B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2017 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Nov 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2209/012
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An enhanced electron amplifier structure includes a microporous substrate having a front surface and a rear surface, the microporous substrate including at least one channel extending substantially through the substrate between the front surface and the rear surface, an ion diffusion layer formed on a surface of the channel, the ion diffusion layer comprising a metal oxide, a resistive coating layer formed on the first ion diffusion layer, an emissive coating layer formed on the resistive coating layer, and an optional ion feedback layer formed on the front surface of the structure. The emissive coating produces a secondary electron emission responsive to an interaction with a particle received by the channel. The ion diffusion layer, the resistive coating layer, the emissive coating layer, and the ion feedback layer are independently deposited via chemical vapor deposition or atomic layer deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.