Solid state imaging device, imaging system, and mobile apparatus
US10868069B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 25, 2018 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Jul 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Provided is a solid state imaging device including a pixel in which the pixel has a photoelectric conversion unit provided in a semiconductor substrate and a light guide having a bottom that emits an incident light to the photoelectric conversion unit. The photoelectric conversion unit includes a first semiconductor region of a first conductivity type provided at a first depth of the semiconductor substrate, and second and third semiconductor regions of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and spaced apart from each other by a first region. Each of the second semiconductor region, the third semiconductor region, and the first region overlaps with a part of the first semiconductor region in a planar view. At least a part of the bottom and at least a part of the first region overlap with each other in the planar view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.