Dual-device photosensitive detection unit based on composite dielectric gate, detector and method thereof

US10868075B2 · kind B2 · utility

Assignee

• Nanjing University · CN

Inventors

• Haowen Ma · 安丰镇, CN
• Feng Yan · Carouge, CH
• Xiaofeng Bu · 安丰镇, CN
• Chen SHEN · Suzhou, CN
• Limin Zhang · Beijing, CN
• Cheng Yang · 安丰镇, CN
• Cheng Mao · 安丰镇, CN

Key dates

• Filing date: Oct 20, 2016
• Grant date: Dec 15, 2020
• Expiry date: Mar 25, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8063

Abstract

A photosensitive detection unit has a composite dielectric gate MOS-C portion and a composite dielectric gate MOSFET portion. The two portions are formed above a same P-type semiconductor substrate, and share a charge coupled layer. A plurality of the photosensitive detection units are arranged on a same P-type semiconductor substrate in form of an array to obtain a detector. Adjacent unit pixels in the detector are isolated by deep trench isolation regions and P+-type injection regions below the isolation regions. During the detection, the P-type semiconductor substrate in the composite dielectric gate MOS-C portion senses light and then couples photoelectrons to the charge coupled layer, and photoelectronic signals are read by the composite dielectric gate MOSFET portion.