Group III nitride semiconductor substrate
US10868124B2 · kind B2 · utility
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Key dates
| Filing date | Dec 3, 2018 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Dec 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A group III nitride semiconductor substrate may include: a p-type conduction region into which a group II element has been implanted in a depth direction of the group III nitride semiconductor substrate from a surface of the group III nitride semiconductor substrate, the p-type conduction region having p-type conductivity, wherein hydrogen has been implanted from the p-type conduction region across an n-type conduction region adjacent to the p-type conduction region in the depth direction of the group III nitride semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.