Ohmic contact structure, semiconductor device including an ohmic contact structure, and method for forming the same
US10868128B2 · kind B2 · utility
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11References
20Claims
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Key dates
| Filing date | Feb 1, 2019 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Feb 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor contact structures, a semiconductor device including the semiconductor contact structures, and a method for forming the same are disclosed. In an embodiment, a semiconductor device includes a channel layer on a substrate; an interface layer on the channel layer, the interface layer including titanium (Ti), the interface layer contacting the channel layer; and a contact metal layer over the interface layer, the contact metal layer including aluminum silicon copper alloy (AlSiCu).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.