Semiconductor thin-film and manufacturing method thereof, thin-film transistor, and display apparatus

US10868266B2 · kind B2 · utility

Assignees

• BOE Technology Group Co., Ltd. · CN
• South China University of Technology · CN

Inventors

• Liangchen Yan · Beijing, CN
• Xiaoguang Xu · Beijing, CN
• Lei Wang · Singapore, SG
• Junbiao Peng · Beijing, CN
• Linfeng LAN · Longbeilingcun, CN

Key dates

• Filing date: Sep 18, 2017
• Grant date: Dec 15, 2020
• Expiry date: Apr 23, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K71/12

Abstract

A method for manufacturing a semiconductor thin film includes sequentially forming a first semiconductor layer, an intermediate layer, and a second semiconductor layer over a substrate. The first semiconductor layer and the second semiconductor layer can be one and another of an n-type semiconductor layer and a p-type semiconductor layer. At least one of the first semiconductor layer, the intermediate layer, or the second semiconductor layer is formed via a solution process. The n-type semiconductor layer can include indium oxide. The intermediate layer can include a self-assembly material. The p-type semiconductor layer can include a p-type organic semiconductor material, and can be pentacene. On the basis, a semiconductor thin film manufactured thereby, a semiconductor thin film transistor, and a display apparatus, are also disclosed.