Transversely-excited film bulk acoustic resonator with half-lambda dielectric layer
US10868510B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 16, 2020 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Mar 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/6406
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The piezoelectric plate and the IDT configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode in the diaphragm. A half-lambda dielectric layer is formed on one of the front surface and back surface of the piezoelectric plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.