Semiconductor nanoparticles, method of producing semiconductor nanoparticles, and light-emitting device
US10870797B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 17, 2019 |
| Grant date | Dec 22, 2020 |
| Priority date | — |
| Expiry date | Dec 17, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/95
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.