Manufacturing method and evaluation method for SiC device
US10872827B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 17, 2019 |
| Grant date | Dec 22, 2020 |
| Priority date | — |
| Expiry date | Jul 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/046
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided is a manufacturing method for a SiC device including: performing an ion implantation process of implanting ions in an epitaxial layer of a SiC epitaxial wafer that has the epitaxial layer; and performing an evaluation process of evaluating a defect of the SiC epitaxial wafer after the ion implantation process, in which the evaluation process includes a surface inspection process of inspecting a surface of the SiC epitaxial wafer, a PL inspection process of irradiating a region that includes the defect detected in the surface inspection to perform photoluminescence measurement after the surface inspection process, and a determination process of determining a degree of the defect from a surface defect image detected in the surface inspection and a PL defect image detected in the PL inspection process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.