Image sensors having separation structures
US10872927B2 · kind B2 · utility
2Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2017 |
| Grant date | Dec 22, 2020 |
| Priority date | — |
| Expiry date | Dec 22, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.