Method of manufacturing an enhanced high performance image sensor device
US10872928B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2019 |
| Grant date | Dec 22, 2020 |
| Priority date | — |
| Expiry date | Aug 23, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
An image sensor includes a substrate, a thin film transistor on the substrate, a dielectric layer over the thin film transistor, a stacked metal layer on and extending through the dielectric layer to the thin film transistor, a bulk heterojunction layer directly coupled to the stacked metal layer, either a hole transport layer directly coupled to the bulk heterojunction layer, and a top contact layer directly coupled to the hole transport layer, or a top contact layer directly coupled to the bulk heterojunction layer. The bulk heterojunction layer includes an electron donor/acceptor material, the hole transport layer includes a transparent conductive polymer material, and the top contact layer includes a transparent conductive material. The image sensor includes a moisture barrier layer directly coupled to the top contact layer, including an optically clear adhesive and a laminated transparent barrier film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.