Semiconductor device

US10872975B2 · kind B2 · utility

Assignees

• Kabushiki Kaisha Toshiba · JP
• Toshiba Electronic Devices & Storage Corporation · JP

Inventor

• Hiroaki Katou · Nonoichi, JP

Key dates

• Filing date: Jan 23, 2019
• Grant date: Dec 22, 2020
• Expiry date: Jan 23, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/699

Abstract

According to an embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, and a second electrode. The gate electrode includes a first portion and a second portion. The first portion opposes the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region in a first direction perpendicular to a second direction from the first electrode toward the first semiconductor region. The second portion is arranged with the first portion in a third direction perpendicular to the first and first directions. The second portion opposes the second semiconductor region in the first direction. A lower end of the second portion is positioned higher than an interface between the first semiconductor region and the second semiconductor region.