Thin film transistor having channel regions, array substrate, manufacturing method thereof and display device comprising the same

US10872984B2 · kind B2 · utility

Assignees

• BOE Technology Group Co., Ltd. · CN
• Ordos Yuansheng Optoelectronics Co., Ltd. · CN

Inventors

• Jinjin Xue · Beijing, CN
• Dawei Shi · Beijing, CN
• Haifeng Xu · San Diego, US
• Lu Yang · Beijing, CN
• Wentao Wang · Tallahassee, US
• Lei Yan · Beijing, CN
• Lei Yao · Beijing, CN
• Fang Yan · Zhaoyuan, CN
• Xiaowen SI · Beijing, CN

Key dates

• Filing date: Sep 19, 2018
• Grant date: Dec 22, 2020
• Expiry date: Sep 19, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/126
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A thin-film transistor (TFT), an array substrate, a manufacturing method thereof and a display device are provided. The TFT includes an active layer, a gate electrode, a first source/drain electrode and a second source/drain electrode. The active layer includes a first channel region and a second channel region, a first source/drain area between the first channel region and the second channel region, and a second source/drain area opposite to the first source/drain area through the first channel region or the second channel region. The gate electrode includes a first gate electrode and a second gate electrode which are respectively overlapped with the first channel region and the second channel region. The first source/drain electrode and the second source/drain electrode are respectively electrically connected with the first source/drain area and the second source/drain area of the active layer.