Photodetector comprising a stack of vertically adjacent layers

US10872997B2 · kind B2 · utility

Assignees

• THALES · FR
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Jean-Luc Reverchon · Palaiseau, FR
• Philippe Bois · Cesson, FR

Key dates

• Filing date: Sep 23, 2016
• Grant date: Dec 22, 2020
• Expiry date: Sep 23, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/306

Abstract

Disclosed is a photodetector which includes, in series along a stacking direction: a first layer forming a substrate of a first semiconductor material; a second layer forming a photoabsorbent layer of a second semiconductor material having a second gap; a third layer forming a barrier layer of a third semiconductor material; and a fourth layer forming a window layer of a fourth semiconductor material, the first material, the third material and the fourth material each having a gap larger than the second gap, the fourth material being n-doped or non-doped and the third material being non-doped or lightly p-doped when the second material is n-doped, and the fourth material being p-doped or non-doped and the third material being non-doped or lightly n-doped when the second material is p-doped.