Quantum dot light-emitting diode devices and manufacturing methods, apparatuses thereof

US10873047B2 · kind B2 · utility

Assignees

• Kunshan New Flat Panel Display Technology Center Co., Ltd. · CN
• KunShan Go-Visionox Opto-Electronics Co., Ltd · CN

Inventors

• Jiantai Wang · Kunshan, CN
• Rubo XING · Kunshan, CN
• Xiaolong Yang · Germantown, US
• Huimin Liu · Kunshan, CN
• Ping Sun · Arlington, US
• Dong Wei · Edison, US

Key dates

• Filing date: May 22, 2019
• Grant date: Dec 22, 2020
• Expiry date: May 22, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K2102/331

Abstract

The disclosure relates to a quantum dot light-emitting diode device and a manufacturing method and an apparatus thereof, which are used to alleviate the problem of interface quenching caused by the large density of the defect state of nanoparticles of the electron transport layer in the prior art. The method includes: dissolving a polyelectrolyte and nanoparticles having inorganic semiconductor properties to form a first mixed solution; depositing the first mixed solution on one surface of the formed quantum dot light-emitting layer to form an electron transport layer containing the polyelectrolyte and the nanoparticles. The end groups carried by at least a portion of the polyelectrolyte are capable of filling surface defects of the nanoparticles in the electron transport layer.