Patent · US Active

Quantum-dot light emitting diode, method of fabricating the quantum-dot light emitting diode and quantum-dot light emitting display device

US10873048B2 · kind B2 · utility

1Cited by
1References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 11, 2019
Grant dateDec 22, 2020
Priority date
Expiry dateOct 11, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K50/171

Abstract

A quantum-dot (QD) light emitting diode and a quantum-dot light emitting display device are disclosed. The QD light emitting diode includes first and second electrodes facing each other; a QD emitting material layer between the first and second electrodes and including a QD; a first charge auxiliary layer between the first electrode and the QD emitting material layer; and a second charge auxiliary layer between the QD emitting material layer and the second electrode, wherein the QD includes a core, a shell surrounding the core and a ligand contacting a portion of the shell, and wherein the first charge auxiliary layer contacts the ligand, and the second charge auxiliary layer contacts the shell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.