Quantum-dot light emitting diode, method of fabricating the quantum-dot light emitting diode and quantum-dot light emitting display device
US10873048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2019 |
| Grant date | Dec 22, 2020 |
| Priority date | — |
| Expiry date | Oct 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K50/171
Abstract
A quantum-dot (QD) light emitting diode and a quantum-dot light emitting display device are disclosed. The QD light emitting diode includes first and second electrodes facing each other; a QD emitting material layer between the first and second electrodes and including a QD; a first charge auxiliary layer between the first electrode and the QD emitting material layer; and a second charge auxiliary layer between the QD emitting material layer and the second electrode, wherein the QD includes a core, a shell surrounding the core and a ligand contacting a portion of the shell, and wherein the first charge auxiliary layer contacts the ligand, and the second charge auxiliary layer contacts the shell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.