Patent · US Active

Light-emitting element and method of manufacturing the same

US10873174B2 · kind B2 · utility

2Cited by
2References
18Claims
0Family size

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Inventors

Key dates

Filing dateSep 1, 2017
Grant dateDec 22, 2020
Priority date
Expiry dateSep 1, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2304/04
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.