LED for plant illumination
US10874057B2 · kind B2 · utility
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2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2020 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Jun 13, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P60/14
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
A light-emitting diode includes a PN junction light-emitting portion over a substrate; wherein the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer, wherein the strained light-emitting layer with a component formula of GaXIn(1-x)AsY1P(1-Y), 0<X<1 and 0<Y≤0.05, and the barrier layer has a component formula of (AlaGa1-A)bIn(1-b)P, 0.3≤a≤1 and 0<b<1; when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has an output power at least 202.2 mW.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.