Patent · US Active

Polycrystalline silicon fragments and process for comminuting polycrystalline silicon rods

US10876221B2 · kind B2 · utility

1Cited by
6References
16Claims
0Family size

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Key dates

Filing dateAug 7, 2014
Grant dateDec 29, 2020
Priority date
Expiry dateJun 11, 2037

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC30B15/00
  • WIPO fieldChemical engineering
  • WIPO sectorChemistry

Abstract

Comminuted polysilicon with reduced contamination is prepared using multi-step comminution employing comminution with comminution tools of differing tungsten carbide content and/or grain size.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.