Bio-field effect transistor device
US10876997B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2017 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Aug 9, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC12Q1/6825
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.