Ultra-low power magnetoelectric magnetic field sensor
US10877110B2 · kind B2 · utility
0Cited by
0References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2018 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Jun 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A high-sensitivity and ultra-low power consumption magnetic sensor using a magnetoelectric (ME) composite comprising of magnetostrictive and piezoelectric layers. This sensor exploits the magnetically driven resonance shift of a free-standing magnetoelectric micro-beam resonator. Also disclosed is the related method for making the magnetic sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.