Electron emission source for metal-insulator-semiconductor-metal having higher kinetic energy for improved electron emission and method for making the same
US10879026B1 · kind B1 · utility
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Key dates
| Filing date | Jun 12, 2020 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Jun 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/18
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron emission source is provided. The electron emission source comprises a first electrode, an insulating layer, a semiconductor layer, and a second electrode. The first electrode, the insulating layer, the semiconductor layer, and the second electrode are successively stacked with each other. The second electrode is a graphene layer, and the graphene layer is an electron emission end to emit electrons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.