Method for controlling exposure region in bevel etching process for semiconductor fabrication
US10879051B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2017 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Jun 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus is provided. The apparatus includes a lower sheltering module. The apparatus further includes an upper sheltering module arranged adjacent to the lower sheltering module. The apparatus includes an upper plate and an upper PEZ ring positioned around the upper plate. The apparatus also includes a shadowing unit that includes a number of engaging parts in the form of arcs detachably positioned on the upper PEZ ring. In addition, the apparatus includes a plasma generation module for generating plasma in the peripheral region of the lower sheltering module and the upper sheltering module.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.