Method for manufacturing semiconductor device and film forming apparatus
US10879064B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2017 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Dec 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a method for manufacturing a semiconductor device, the semiconductor device including a substrate, and an oxide semiconductor TFT that is supported by the substrate and includes an oxide semiconductor film as an active layer. The method includes: (A) preparing MO gas containing a first organometallic compound that contains In and a second organometallic compound that contains Zn; and (B) supplying gas containing the MO gas and oxygen to the substrate placed in a chamber under a condition in which the substrate is heated to 500° C. or lower, and growing an oxide semiconductor film containing In and Zn on the substrate using an MOCVD method. Step (B) is performed under a condition in which plasma is formed in the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.