ESD protection silicon controlled rectifier device
US10879231B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2019 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Apr 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/107
Abstract
An ESD protection SCR device includes an epitaxial layer provided on a P-type semiconductor substrate, the epitaxial layer having the P-type conductivity, element isolation layers provided on the epitaxial layer, the element isolation layers dividing the epitaxial layer into an anode region and a cathode region, a first well of an N-type conductivity, provided in a portion of the epitaxial layer corresponding to the anode region, a first impurity region provided on a surface of the first well, the first impurity region being connected to an anode terminal and having a high concentration P-type conductivity, a second well of the P-type conductivity, provided in a portion of the epitaxial layer corresponding to the cathode region, a second impurity region provided on a surface of the second well, the second impurity region being connected to a cathode terminal and having a high concentration N-type conductivity, and a floating well of the N-type conductivity, buried in the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.