Process for fabricating capacitive elements in trenches
US10879233B2 · kind B2 · utility
1Cited by
15References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 24, 2018 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Aug 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitive element is fabricated by forming a sacrificial trench isolation and directionally etching through the sacrificial trench isolation and into an underlying semiconductor substrate to form an electrode trench. The electrode trench is then clad with an insulating material and filled with a conductive material. The conductive fill provided one capacitor electrode and the semiconductor substrate forms another capacitor electrode, with the insulating material cladding forming the capacitor dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.