Storage device
US10879268B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 2, 2018 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Feb 2, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2275
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A storage device according to the disclosure includes a first transistor and a second transistor each including a first diffusion layer, a second diffusion layer, and a gate, and that are each able to store a threshold state, a first signal line, a second signal line, a first switch transistor that is turned on and couples the first signal line and the first diffusion layer of the first transistor, a second switch transistor that is turned on and couples the second diffusion layer of the first transistor and the first diffusion layer of the second transistor, and a third switch transistor that is turned on and couples the second diffusion layer of the second transistor and the second signal line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.