Semiconductor integrated circuit device
US10879270B2 · kind B2 · utility
7Cited by
0References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 30, 2019 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Jan 30, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/966
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided is a semiconductor integrated circuit device including a nanowire field effect transistor (FET) and having a layout configuration effective for making manufacturing the device easy. A standard cell having no logical function is disposed adjacent to a standard cell having a logical function. The standard cell includes nanowire FETs having nanowires and pads. The standard cell further includes dummy pads, which have no contribution to a logical function of a circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.