Semiconductor device including floating diffusion and extension pattern
US10879286B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2019 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Aug 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and an image sensor, the semiconductor device including a substrate; a photoelectric conversion device in the substrate; a first floating diffusion region adjacent to the photoelectric conversion device; a transfer transistor connected to the photoelectric conversion device and the first floating diffusion region; a reset transistor connected to the first floating diffusion region; a dual conversion gain (DCG) transistor between the first floating diffusion region and the reset transistor; a second floating diffusion region between the DCG transistor and the reset transistor; and an extension pattern, a first portion of the extension pattern being in contact with the second floating diffusion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.