Micro semiconductor structure
US10879306B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2019 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Jun 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/036
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, a plurality of micro semiconductor devices disposed on the substrate, and a first supporting layer disposed between the substrate and the micro semiconductor devices. Each of the micro semiconductor devices has a first electrode and a second electrode disposed on a lower surface of the micro semiconductor devices. The lower surface includes a region, wherein the region is between the first electrode and the second electrode. An orthographic projection of the first supporting layer on the substrate at least overlaps an orthographic projection of a portion of the region on the substrate. The first supporting layer directly contacts the region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.