Thin film transistor (TFT) substrate, manufacturing method thereof, and organic light-emitting diode (OLED) substrate
US10879328B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 29, 2019 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Aug 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/6572
Abstract
The present disclosure relates to a thin film transistor (TFT) substrate, a manufacturing method thereof, and an organic light-emitting (OLED) substrate. The interlayer dielectric layer manufactured by the manufacturing method may be configured in the structure of two silicon oxide layers sandwiching one silicon nitride layer. As such, the bonding force between the interlayer dielectric layer and the gate, and the bonding force between the interlayer dielectric layer, and the source and the drain may be improved. The source and the drain may be prevented from falling off from the interlayer dielectric layer during the annealing process. Production yield of the TFT substrate may be improved. The OLED substrate adopting the manufactured of the OLED substrate of the present disclosure may have a better production yield and quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.