Needle cell trench MOSFET
US10879363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2019 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Mar 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor die has a semiconductor body coupled to a first load terminal and a second load terminal of the power semiconductor die and configured to conduct a load current between the load terminals. The die further comprises: a control trench structure for controlling the load current, the control trench structure extending into the semiconductor body along a vertical direction and arranged in accordance with a horizontal grid pattern having a plurality of grid openings; a plurality of power cells, each power cell being, in a horizontal cross-section, at least partially arranged in a respective one of the plurality of grid openings. At least one of the power cells comprises: a section of a drift zone of a first conductivity type, a section of a channel zone of a second conductivity type and a section of a source zone of the first conductivity type, wherein the channel zone section is electrically connected to the first load terminal and isolates the source zone section from the drift zone section; a control section with at least one control electrode section in the control trench structure; a columnar field plate trench extending into the semiconductor body along the ve…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.