Device integrated with junction field effect transistor and method for manufacturing the same
US10879385B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2017 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Aug 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/2527
Abstract
A device integrated with a junction field-effect transistor, the device is divided into a JFET region and a power device area, and the device includes: a drain (201) having a first conduction type; and a first conduction type region (214) disposed on a front face of the drain; the JFET region further includes: a JFET source (208) having a first conduction type; a first well (202) having a second conduction type; a metal electrode (212) formed on the JFET source (208), which is in contact with the JFET source (208); a JFET metal gate (213) disposed on the first well (202) at both sides of the JFET source (208); and a first clamping region (210) located below the JFET metal gate (213) and within the first well (202).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.