Quantum dot-based color-converted light emitting device and method for manufacturing the same
US10879434B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 24, 2018 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Mar 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
Abstract
A light-emitting device includes a flip-chip LED semiconductor chip to provide a primary light, a photoluminescent (PL) structure disposed on the LED semiconductor chip and a moisture-barrier reflective structure covering a chip-edge surface of the LED semiconductor chip and a photoluminescent-side surface of the PL structure. The sequentially stacked PL structure includes a first PL layer, a transparent isolation layer, a second PL layer and a transparent moisture barrier layer. For example, the LED semiconductor chip emits a blue light, the first PL layer includes a red phosphor material, and the second PL layer includes a green quantum dot (QD) material. Therefore, the red phosphor material of the first PL layer can convert a portion of the higher-energy-level blue light into a lower-energy-level converted red light, so as to reduce an intensity of an unconverted portion of the blue light reaching the green QD material within the second PL layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.