Patent · US Active

Spin oscillator device and mutually synchronized spin oscillator device arrays

US10879453B2 · kind B2 · utility

1Cited by

18References

12Claims

0Family size

Assignee

Nanosc AB · SE

Inventors

Johan Akerman · Sollentuna, SE
Ahmad A Awad · Gothenburg, SE
Philipp Dürrenfeld · Gothenburg, SE
Afshin HOUSHANG · Gothenburg, SE
Mykola Dvornik · Gothenburg, SE

Key dates

Filing date	Oct 27, 2017
Grant date	Dec 29, 2020
Priority date	—
Expiry date	Oct 27, 2037

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB82Y25/00
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A spin oscillator device including a first spin Hall effect nano-oscillator, SHNO, having an extended multilayered magnetic thin-film stack, wherein a nano-constriction, NC, is provided in the magnetic film stack providing an SHNO including a magnetic free-layer and a spin Hall effect layer, and having a nanoscopic region, wherein the NC is configured to focus electric current to the nanoscopic region, configured to generate the necessary current densities needed to excite magnetization auto-oscillations, MAO, in the magnetic free layer, wherein a circumferential magnetic field surrounds the NC, wherein an externally applied field with a substantial out-of-plane component is configured to control the spatial extension of the MAO towards a second spin oscillator device, which is arranged in MAO communication and synchronized to the first NC.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.