Patent · US Active

Method of forming a metallic conductive filament and a random access memory device for carrying out the method

US10879460B2 · kind B2 · utility

0Cited by

0References

2Claims

0Family size

Assignee

Univerzita Pardubice · CZ

Inventors

Tomas Wagner · Málaga, ES
Bo Zhang · Shanghai, CN

Key dates

Filing date	Feb 21, 2018
Grant date	Dec 29, 2020
Priority date	—
Expiry date	Feb 27, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/75
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A random access memory device (400) comprises inert-inert electrode cell (210) and inert-active electrode cell (110). The inert-inert electrode cell (210) and inert-active electrode cell (110) are connected in series in a serial connection. The inert-inert electrode cell (210) comprises a top inert electrode (200), an electrolyte (202) and a bottom inert electrode (206), the inert-active electrode cell (110) comprises a top active electrode (100), an electrolyte (102) and a bottom inert electrode (106). The bottom inert electrode (200) of inert-inert electrode cell (210) is connected with negative electrode of voltage source (300) and the top active electrode (100) of inert-active electrode cell (110) is connected with positive electrode of voltage source (300).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.