Sputtering target and method for producing sputtering target
US10883169B2 · kind B2 · utility
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Key dates
| Filing date | Oct 24, 2016 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Oct 21, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention provides a sputtering target having a composition containing 45 at % to 90 at % of In, and the remainder including Cu and inevitable impurities. An In single phase and a Cu11In9 compound phase exist, and an XRD peak ratio I(In)/I(Cu11In9) between the In single phase and the Cu11In9 compound phase is in a range of 0.01 to 3. The average grain size of the Cu11In9 compound phase is 150 μm or less, the amount of oxygen is 500 mass ppm or less, and the theoretical density ratio is 85% or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.